ArticleScientific reports2023
Evolution of type-II hetero-strain cylindrical-gate-all-around nanowire FET for exploration and analysis of enriched performances.
Article in Scientific reports, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects.Nanomaterials (Basel, Switzerland) · 2025Article
- Exploration and Analysis of GaN-Based FETs with Varied Doping Concentration in Nano Regime for Biosensing Application.Biosensors · 2025Article
- Core-insulator embedded nanosheet field-effect transistor for suppressing device-to-device variations.Scientific reports · 2024Article
- Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance.Scientific reports · 2024Article
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Authors and funding
4 authors.
Funding
Abstract
The incubation of strained nano-system in the form of tri-layered structure as nanowire channel in the cylindrical-gate-all-around (CGAA) FET at 10 nm gate length is developed for the first time to keep abreast with the proposed 3 nm technology node of IRDS 2022. The system installs Type-II hetero-strain alignment in the channel attesting itself as the fastest operating device debasing the SCEs at nano regime. The ultra-thin strained-channel comprises of two cylindrical s-Si wells encompassing s-SiGe barrier in between, which enables improvement of carrier mobility by succumbing of quantum charge carriers in the region. This results in 2D charge centroid creation with cylindrical based circular Nano-system contemplating electrostatic potential difference leading to enriched electric field, current density and transconductance, while the gate-all-around architecture with increased gate controllability lowers leakage current, in the device. The 10 nm strained-channel CGAA astounded havoc ON current enhancements of ~ 20% over 22 nm strained CGAA, 57% over Si CGAA FET and 75% over proposed 3 nm technology node IRDS 2022 are accomplished. Hence, carrier mobility and velocity enriches instituting quasi-ballistic transport through the Nanowire channel, thereby augments in ~ 28% drain current so the 10 nm channel CGAA FET stands as the most suitable and improved device in nano regime.
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