Evidence map›Paper›PMID 37382747›Full record

ArticleDiscover nano2023

Structural and optical analyses for InGaN-based red micro-LED.

Fu-He Hsiao, Wen-Chien Miao, Yu-Heng Hong, Hsin Chiang, I-Hung Ho, Kai-Bo Liang, Daisuke Iida, Chun-Liang Lin, Hyeyoung Ahn, Kazuhiro Ohkawa and 2 more

Open access · diamondAbstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Discover nano, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
2.3field-weighted citation impact, top 12% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed, 12 citations in OpenAlex.

  1. Article
  2. Article
  3. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors at 5 institutions in 2 countries.

Fu-He HsiaoSemiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan.
Wen-Chien MiaoSemiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan.
Yu-Heng HongSemiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan.
Hsin ChiangDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
I-Hung HoDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Kai-Bo LiangDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Daisuke IidaComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955 6900, Saudi Arabia.
Chun-Liang LinDepartment of Electrophysics, College of Science, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Hyeyoung AhnDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Kazuhiro OhkawaComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955 6900, Saudi Arabia.
Chiao-Yun ChangDepartment of Electrical Engineering, National Taiwan Ocean University, Keelung, 202301, Taiwan. cy_chang@mail.ntou.edu.tw.
Hao-Chung KuoSemiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan. hckuo@faculty.nctu.edu.tw.
National Yang Ming Chiao Tung University · TWTaiwan Forestry Research Institute · TWKing Abdullah University of Science and Technology · SANational Taiwan Ocean University · TWTaiwan Semiconductor Manufacturing Company (Taiwan) · TW

Funding

the Ministry of Science and Technology in Taiwan MOST 111-2124-M-A49-004
6 · The paper itself

Abstract

This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.

Indexed as

Emission efficiencyMicro-LEDPhotoluminescenceRed InGaN-based LEDV-pits

Identifiers

PMID37382747
PMCPMC10214918
OpenAlexW4378071329

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.