ArticleDiscover nano2023
Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy.
Article in Discover nano, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
The droplet epitaxy of indium gallium nitride quantum dots (InGaN QDs), the formation of In-Ga alloy droplets in ultra-high vacuum and then surface nitridation by plasma treatment, is firstly investigated by using plasma-assisted molecular beam epitaxy. During the droplet epitaxy process, in-situ reflection high energy electron diffraction patterns performs the amorphous In-Ga alloy droplets transform to polycrystalline InGaN QDs, which are also confirmed by the characterizations of transmission electron microscopy and X-ray photoelectron spectroscopy. The substrate temperature, In-Ga droplet deposition time, and duration of nitridation are set as parameters to study the growth mechanism of InGaN QDs on Si. Self-assembled InGaN QDs with a density of 1.33 × 10
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