Evidence map›Paper›PMID 37382743›Full record

ArticleDiscover nano2023

Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber.

Tadas Paulauskas, Vaidas Pačebutas, Viktorija Strazdienė, Andrejus Geižutis, Jan Devenson, Mindaugas Kamarauskas, Martynas Skapas, Rokas Kondrotas, Mantas Drazdys, Matas Rudzikas and 3 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Discover nano, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Tadas PaulauskasCenter for Physical Sciences and Technology, Saulėtekio Ave. 3, 10257, Vilnius, Lithuania. tadas.paulauskas@ftmc.lt.
Vaidas PačebutasCenter for Physical Sciences and Technology, Saulėtekio Ave. 3, 10257, Vilnius, Lithuania.
Viktorija StrazdienėCenter for Physical Sciences and Technology, Saulėtekio Ave. 3, 10257, Vilnius, Lithuania.
Andrejus GeižutisCenter for Physical Sciences and Technology, Saulėtekio Ave. 3, 10257, Vilnius, Lithuania.
Jan DevensonCenter for Physical Sciences and Technology, Saulėtekio Ave. 3, 10257, Vilnius, Lithuania.
Mindaugas KamarauskasCenter for Physical Sciences and Technology, Saulėtekio Ave. 3, 10257, Vilnius, Lithuania.
Martynas SkapasCenter for Physical Sciences and Technology, Saulėtekio Ave. 3, 10257, Vilnius, Lithuania.
Rokas KondrotasCenter for Physical Sciences and Technology, Saulėtekio Ave. 3, 10257, Vilnius, Lithuania.
Mantas DrazdysCenter for Physical Sciences and Technology, Saulėtekio Ave. 3, 10257, Vilnius, Lithuania.
Matas RudzikasApplied Research Institute for Prospective Technologies, Vismaliukų St. 34, 10243, Vilnius, Lithuania.
Benjaminas ŠebekaCenter for Physical Sciences and Technology, Saulėtekio Ave. 3, 10257, Vilnius, Lithuania.
Viliam VretenárCenter for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, Vazovova 5, 812 43, Bratislava, Slovakia.
Arūnas KrotkusCenter for Physical Sciences and Technology, Saulėtekio Ave. 3, 10257, Vilnius, Lithuania.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Group III-V semiconductor multi-junction solar cells are widely used in concentrated-sun and space photovoltaic applications due to their unsurpassed power conversion efficiency and radiation hardness. To further increase the efficiency, new device architectures rely on better bandgap combinations over the mature GaInP/InGaAs/Ge technology, with Ge preferably replaced by a 1.0 eV subcell. Herein, we present a thin-film triple-junction solar cell AlGaAs/GaAs/GaAsBi with 1.0 eV dilute bismide. A compositionally step-graded InGaAs buffer layer is used to integrate high crystalline quality GaAsBi absorber. The solar cells, grown by molecular-beam epitaxy, achieve 19.1% efficiency at AM1.5G spectrum, 2.51 V open-circuit voltage, and 9.86 mA/cm

Indexed as

GaAsBiIII–V photovoltaicsMolecular beam epitaxyMulti-junction solar cells

Identifiers

PMID37382743
PMCPMC10275816

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.