Evidence map›Paper›PMID 37374681›Full record

ArticleMicromachines2023

Field-Effect Transistors Based on Single-Layer Graphene and Graphene-Derived Materials.

Octavian-Gabriel Simionescu, Andrei Avram, Bianca Adiaconiţă, Petruţa Preda, Cătălin Pârvulescu, Florin Năstase, Eugen Chiriac, Marioara Avram

Abstract read
In one paragraph

Article in Micromachines, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed.

  1. Article
  2. Article
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  6. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Octavian-Gabriel SimionescuNational Institute for Research and Development in Microtechnologies-IMT Bucharest, 126A Erou Iancu Nicolae, 077190 Voluntari, Romania.ORCID 0000-0001-5827-503X
Andrei AvramNational Institute for Research and Development in Microtechnologies-IMT Bucharest, 126A Erou Iancu Nicolae, 077190 Voluntari, Romania.ORCID 0000-0003-0315-6599
Bianca AdiaconiţăNational Institute for Research and Development in Microtechnologies-IMT Bucharest, 126A Erou Iancu Nicolae, 077190 Voluntari, Romania.ORCID 0000-0003-3784-0807
Petruţa PredaNational Institute for Research and Development in Microtechnologies-IMT Bucharest, 126A Erou Iancu Nicolae, 077190 Voluntari, Romania.
Cătălin PârvulescuNational Institute for Research and Development in Microtechnologies-IMT Bucharest, 126A Erou Iancu Nicolae, 077190 Voluntari, Romania.ORCID 0000-0001-8570-0089
Florin NăstaseNational Institute for Research and Development in Microtechnologies-IMT Bucharest, 126A Erou Iancu Nicolae, 077190 Voluntari, Romania.ORCID 0000-0002-6764-0403
Eugen ChiriacNational Institute for Research and Development in Microtechnologies-IMT Bucharest, 126A Erou Iancu Nicolae, 077190 Voluntari, Romania.ORCID 0000-0001-9048-1853
Marioara AvramNational Institute for Research and Development in Microtechnologies-IMT Bucharest, 126A Erou Iancu Nicolae, 077190 Voluntari, Romania.ORCID 0000-0002-4126-7401

Funding

Romania's Ministry of Research, Innovation, and Digitalization 597PED/2022Romania's Ministry of Research, Innovation, and Digitalization PN 23070202
6 · The paper itself

Abstract

The progress of advanced materials has invoked great interest in promising novel biosensing applications. Field-effect transistors (FETs) are excellent options for biosensing devices due to the variability of the utilized materials and the self-amplifying role of electrical signals. The focus on nanoelectronics and high-performance biosensors has also generated an increasing demand for easy fabrication methods, as well as for economical and revolutionary materials. One of the innovative materials used in biosensing applications is graphene, on account of its remarkable properties, such as high thermal and electrical conductivity, potent mechanical properties, and high surface area to immobilize the receptors in biosensors. Besides graphene, other competing graphene-derived materials (GDMs) have emerged in this field, with comparable properties and improved cost-efficiency and ease of fabrication. In this paper, a comparative experimental study is presented for the first time, for FETs having a channel fabricated from three different graphenic materials: single-layer graphene (SLG), graphene/graphite nanowalls (GNW), and bulk nanocrystalline graphite (bulk-NCG). The devices are investigated by scanning electron microscopy (SEM), Raman spectroscopy, and

Indexed as

bulk nanocrystalline graphite (bulk-NCG)field-effect transistor (FET)graphene/graphite nanowalls (GNW)single-layer graphene (SLG)

Identifiers

PMID37374681
PMCPMC10303111

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.