Evidence map›Paper›PMID 37368309›Full record

ReviewNanomaterials (Basel, Switzerland)2023

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications.

Somnath S Kundale, Girish U Kamble, Pradnya P Patil, Snehal L Patil, Kasturi A Rokade, Atul C Khot, Kiran A Nirmal, Rajanish K Kamat, Kyeong Heon Kim, Ho-Myoung An and 2 more

Open access · goldAbstract readReview
In one paragraph

Review in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
3.6field-weighted citation impact, top 6% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed, 28 citations in OpenAlex.

  1. Review
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors at 4 institutions in 2 countries.

Somnath S KundaleComputational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India.
Girish U KambleComputational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India.
Pradnya P PatilComputational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India.
Snehal L PatilComputational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India.
Kasturi A RokadeComputational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India.
Atul C KhotSchool of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea.ORCID 0009-0008-1935-3806
Kiran A NirmalSchool of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea.
Rajanish K KamatDepartment of Electronics, Shivaji University, Kolhapur 416004, India.
Kyeong Heon KimDepartment of Convergence Electronic Engineering, Gyeongsang National University, Jinjudae-ro 501, Jinju 52828, Republic of Korea.
Ho-Myoung AnDepartment of Electronics, Osan University, 45, Cheonghak-ro, Osan-si 18119, Republic of Korea.
Tukaram D DongaleComputational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India.ORCID 0000-0003-2536-6132
Tae Geun KimSchool of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea.ORCID 0000-0001-6211-1134
Shivaji University · INKorea University · KRGyeongsang National University · KROsan University · KR

Funding

Mahatma Jyotiba Phule Research Fellowship MJPRF-2021National Research Foundation of Korea 2016R1A3B 1908249Samsung Semiconductor Research Center in Korea University IO201211-08116-01
6 · The paper itself

Abstract

Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section.

Indexed as

electrochemical synthesismemristorneuromorphic computingresistive memoryresistive switchingsensor

Identifiers

PMID37368309
PMCPMC10303625
OpenAlexW4381252071

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.