ArticleScience advances2023
Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity.
Article in Science advances, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
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Who cites it
9 citing papers in PubMed.
- Symmetry breaking induces room-temperature interface ferroelectricity in two-dimensional metastable mosaic-like heterostructures.Nature communications · 2026Article
- Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBaACS applied materials & interfaces · 2026Article
- HfOScience advances · 2026Article
- Influence of the Si-Layer Thickness on the Structural, Compositional and Resistive Switching Properties of SiOMaterials (Basel, Switzerland) · 2025Article
- In situ observation of oxygen ion dynamics in topological phase change memristors through self-assembled interface design.Science advances · 2025Article
- Engineered high endurance in WOScience advances · 2025Article
- Sodium-Controlled Interfacial Resistive Switching in Thin Film Niobium Oxide for Neuromorphic Applications.Chemistry of materials : a publication of the American Chemical Society · 2024Article
- Filament-free memristors for computing.Nano convergence · 2023Review
- Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing.Nano convergence · 2023Review
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Authors and funding
11 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium oxide-based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide during pulsed laser deposition at temperatures ≤400°C. The added Ba prevents the films from crystallizing and leads to ∼20-nm-thin films consisting of an amorphous HfO
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Registered trials
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