Evidence map›Paper›PMID 37328514›Full record

ArticleNature communications2023

All-ferroelectric implementation of reservoir computing.

Zhiwei Chen, Wenjie Li, Zhen Fan, Shuai Dong, Yihong Chen, Minghui Qin, Min Zeng, Xubing Lu, Guofu Zhou, Xingsen Gao and 1 more

Abstract read
In one paragraph

Article in Nature communications, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 35 papers.

0numbers the graph read from it
0cells of the map it votes in
35citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

35 citing papers in PubMed.

  1. Ultralow-Energy Analog Reservoir Computing via Reconfigurable 2-Transistor Memory.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  2. Article
  3. Article
  4. Volatile ZrOAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  5. Anisotropic Memristive Switching in NbOClAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  6. Article
  7. Article
  8. Memristive Physical Reservoir Computing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Review
  9. Ferroelectric Devices for In-Memory and In-Sensor Computing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Review
  10. Article
  11. Review
  12. Article
  13. Article
  14. Article
  15. Article
  16. Ferroelectric nanodot reservoir for neuromorphic computing.Beilstein journal of nanotechnology · 2026
    Article
  17. Multimodal flexible sensor system toward telediagnosis.Proceedings of the Japan Academy. Series B, Physical and biological sciences · 2026
    Review
  18. Article
  19. Article
  20. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Zhiwei ChenInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006, Guangzhou, China.
Wenjie LiInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006, Guangzhou, China.
Zhen FanInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006, Guangzhou, China. fanzhen@m.scnu.edu.cn.ORCID http://orcid.org/0000-0002-1756-641X
Shuai DongInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006, Guangzhou, China.
Yihong ChenInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006, Guangzhou, China.
Minghui QinInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006, Guangzhou, China.
Min ZengInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006, Guangzhou, China.
Xubing LuInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006, Guangzhou, China.ORCID http://orcid.org/0000-0002-2552-9571
Guofu ZhouNational Center for International Research on Green Optoelectronics, South China Normal University, 510006, Guangzhou, China.
Xingsen GaoInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006, Guangzhou, China.ORCID http://orcid.org/0000-0002-2725-0785
Jun-Ming LiuInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006, Guangzhou, China.ORCID http://orcid.org/0000-0001-8988-8429

Funding

National Natural Science Foundation of China (National Science Foundation of China) 92163210, U1932125, 52172143
6 · The paper itself

Abstract

Reservoir computing (RC) offers efficient temporal information processing with low training cost. All-ferroelectric implementation of RC is appealing because it can fully exploit the merits of ferroelectric memristors (e.g., good controllability); however, this has been undemonstrated due to the challenge of developing ferroelectric memristors with distinctly different switching characteristics specific to the reservoir and readout network. Here, we experimentally demonstrate an all-ferroelectric RC system whose reservoir and readout network are implemented with volatile and nonvolatile ferroelectric diodes (FDs), respectively. The volatile and nonvolatile FDs are derived from the same Pt/BiFeO

Indexed as

CognitionLong-Term PotentiationMemory, Short-TermNeuronal PlasticityNutritional Status

Identifiers

PMID37328514
PMCPMC10275999

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.