Evidence map›Paper›PMID 37318187›Full record

ReviewAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2023

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits.

Jun Hwan Moon, Eunjin Jeong, Seunghyun Kim, Taesoon Kim, Eunsoo Oh, Keun Lee, Hauk Han, Young Keun Kim

Abstract readReview
In one paragraph

Review in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 12 papers.

0numbers the graph read from it
0cells of the map it votes in
12citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

12 citing papers in PubMed.

  1. Article
  2. Article
  3. Turing-patterned TaNature communications · 2026
    Article
  4. Accelerated Discovery of Topological Conductors for Nanoscale Interconnects.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  5. Article
  6. Article
  7. Article
  8. Article
  9. Article
  10. Article
  11. Article
  12. Materials Quest for Advanced Interconnect Metallization in Integrated Circuits.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2023
    Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Jun Hwan MoonDepartment of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea.ORCID https://orcid.org/0000-0002-8187-6578
Eunjin JeongDepartment of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea.ORCID https://orcid.org/0000-0002-1657-5744
Seunghyun KimDepartment of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea.ORCID https://orcid.org/0000-0001-5290-0463
Taesoon KimDepartment of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea.ORCID https://orcid.org/0000-0003-4809-7684
Eunsoo OhDepartment of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea.ORCID https://orcid.org/0000-0002-9430-2311
Keun LeeSemiconductor R&D center, Samsung Electronics Co., Ltd., Gyeonggi-do, 18448, Republic of Korea.
Hauk HanSemiconductor R&D center, Samsung Electronics Co., Ltd., Gyeonggi-do, 18448, Republic of Korea.
Young Keun KimDepartment of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea.ORCID https://orcid.org/0000-0002-0868-4625

Funding

Basic Science Research Program through the National Research Foundation of Korea(NRF)Ministry of Education 2021R1A6A3A13046504Samsung Electronics Co., Ltd. IO210317-08500-01Samsung Research Funding and Incubation Center of Samsung Electronics SRFC-TA1703-06
6 · The paper itself

Abstract

Integrated circuits (ICs) are challenged to deliver historically anticipated performance improvements while increasing the cost and complexity of the technology with each generation. Front-end-of-line (FEOL) processes have provided various solutions to this predicament, whereas the back-end-of-line (BEOL) processes have taken a step back. With continuous IC scaling, the speed of the entire chip has reached a point where its performance is determined by the performance of the interconnect that bridges billions of transistors and other devices. Consequently, the demand for advanced interconnect metallization rises again, and various aspects must be considered. This review explores the quest for new materials for successfully routing nanoscale interconnects. The challenges in the interconnect structures as physical dimensions shrink are first explored. Then, various problem-solving options are considered based on the properties of materials. New materials are also introduced for barriers, such as 2D materials, self-assembled molecular layers, high-entropy alloys, and conductors, such as Co and Ru, intermetallic compounds, and MAX phases. The comprehensive discussion of each material includes state-of-the-art studies ranging from the characteristics of materials by theoretical calculation to process applications to the current interconnect structures. This review intends to provide a materials-based implementation strategy to bridge the gap between academia and industry.

Indexed as

electrical resistivityelectromigrationintegrated circuitinterconnectmetallizationsemiconductorsize effect

Identifiers

PMID37318187
PMCPMC10427378

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.