Evidence map›Paper›PMID 37314734›Full record

ReviewACS applied materials & interfaces2023

Periodic Arrays of Dopants in Silicon by Ultralow Energy Implantation of Phosphorus Ions through a Block Copolymer Thin Film.

Stefano Kuschlan, Riccardo Chiarcos, Michele Laus, Francesc Pérez-Murano, Jordi Llobet, Marta Fernandez-Regulez, Caroline Bonafos, Michele Perego, Gabriele Seguini, Marco De Michielis and 1 more

Open access · hybridAbstract readReview
In one paragraph

Review in ACS applied materials & interfaces, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
0.6field-weighted citation impact, top 42% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed, 6 citations in OpenAlex.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors at 4 institutions in 3 countries.

Stefano KuschlanCNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza I-20864, Italy.ORCID 0000-0001-6096-7545
Riccardo ChiarcosUniversità del Piemonte Orientale ''A. Avogadro'', Viale T. Michel 11, Alessandria I-15121, Italy.
Michele LausUniversità del Piemonte Orientale ''A. Avogadro'', Viale T. Michel 11, Alessandria I-15121, Italy.
Francesc Pérez-MuranoInstitute of Microelectronics of Barcelona (IMB-CNM, CSIC), Bellaterra 08193, Spain.
Jordi LlobetInstitute of Microelectronics of Barcelona (IMB-CNM, CSIC), Bellaterra 08193, Spain.
Marta Fernandez-RegulezInstitute of Microelectronics of Barcelona (IMB-CNM, CSIC), Bellaterra 08193, Spain.
Caroline BonafosCEMES-CNRS, Université de Toulouse, CNRS, Toulouse 31055, France.
Michele PeregoCNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza I-20864, Italy.ORCID 0000-0001-7431-1969
Gabriele SeguiniCNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza I-20864, Italy.ORCID 0000-0002-7729-6212
Marco De MichielisCNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza I-20864, Italy.
Graziella TallaridaCNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza I-20864, Italy.ORCID 0000-0002-6794-0799
Institute for Microelectronics and Microsystems · ITInstitut de Microelectrònica de Barcelona · ESUniversità degli Studi del Piemonte Orientale “Amedeo Avogadro” · ITCentre National de la Recherche Scientifique · FR

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

In this work, block copolymer lithography and ultralow energy ion implantation are combined to obtain nanovolumes with high concentrations of phosphorus atoms periodically disposed over a macroscopic area in a p-type silicon substrate. The high dose of implanted dopants grants a local amorphization of the silicon substrate. In this condition, phosphorus is activated by solid phase epitaxial regrowth (SPER) of the implanted region with a relatively low temperature thermal treatment preventing diffusion of phosphorus atoms and preserving their spatial localization. Surface morphology of the sample (AFM, SEM), crystallinity of the silicon substrate (UV Raman), and position of the phosphorus atoms (STEM- EDX, ToF-SIMS) are monitored during the process. Electrostatic potential (KPFM) and the conductivity (C-AFM) maps of the sample surface upon dopant activation are compatible with simulated

Indexed as

block copolymerdopingion implantationPS-b-PMMAsilicon

Identifiers

PMID37314734
PMCPMC10739587
OpenAlexW4380576322

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.