ArticleScientific reports2023
Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO
Article in Scientific reports, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
8 citing papers in PubMed.
- Two-Dimensional Flash Memory: Materials, Interfaces, and Storage-Computing Convergence.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Battery-Inspired Electrochemical Synapses for Neuromorphic Applications.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Polymer-Based Linear and Symmetric Artificial Synaptic Memristors for Accurate and Reliable Neuromorphic Computing Applications.Nanomaterials (Basel, Switzerland) · 2026Review
- Memristive Baffle Systems: Design, Simulation, and Applications.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- HfOScience advances · 2026Article
- Impact of Reset Pulse Width on Gradual Conductance Programming in AlMicromachines · 2025Article
- Resistive Switching Devices for Neuromorphic Computing: From Foundations to Chip Level Innovations.Nanomaterials (Basel, Switzerland) · 2024Review
- Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies.Materials (Basel, Switzerland) · 2023Article
Corrections and comments
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Authors and funding
5 authors.
Funding
Abstract
Memristive devices have been explored as electronic synaptic devices to mimic biological synapses for developing hardware-based neuromorphic computing systems. However, typical oxide memristive devices suffered from abrupt switching between high and low resistance states, which limits access to achieve various conductance states for analog synaptic devices. Here, we proposed an oxide/suboxide hafnium oxide bilayer memristive device by altering oxygen stoichiometry to demonstrate analog filamentary switching behavior. The bilayer device with Ti/HfO
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.