Evidence map›Paper›PMID 37299619›Full record

ArticleNanomaterials (Basel, Switzerland)2023

A Voltage-Tuned Terahertz Absorber Based on MoS

Omnia Samy, Mohamed Belmoubarik, Taiichi Otsuji, Amine El Moutaouakil

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Omnia SamyCollege of Engineering, United Arab University, Al Ain P.O. Box 15551, United Arab Emirates.ORCID 0000-0003-0664-5486
Mohamed BelmoubarikInternational Iberian Nanotechnology Laboratory, INL, Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal.ORCID 0000-0003-3592-1259
Taiichi OtsujiResearch Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.ORCID 0000-0002-0887-0479
Amine El MoutaouakilCollege of Engineering, United Arab University, Al Ain P.O. Box 15551, United Arab Emirates.ORCID 0000-0002-7407-020X

Funding

Tohoku University RIEC R04/A05United Arab Emirates University 31N393
6 · The paper itself

Abstract

Terahertz frequency has promising applications in communication, security scanning, medical imaging, and industry. THz absorbers are one of the required components for future THz applications. However, nowadays, obtaining a high absorption, simple structure, and ultrathin absorber is a challenge. In this work, we present a thin THz absorber that can be easily tuned through the whole THz range (0.1-10 THz) by applying a low gate voltage (<1 V). The structure is based on cheap and abundant materials (MoS

Indexed as

graphenemonolayer black phosphorousmonolayer MoS2nanoribbonsTHz absorbersTHz applications

Identifiers

PMID37299619
PMCPMC10254585

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.