ArticleNature communications2023
Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications.
Article in Nature communications, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
6 citing papers in PubMed.
- Perception, Synaptic Plasticity, and Spiking Neuron Function Enabled by a 2D Ferroelectric NbOBrAdvanced materials (Deerfield Beach, Fla.) · 2026Article
- Molecular crystal memristors.Nature nanotechnology · 2025Article
- Van der Waals Engineering of One-Transistor-One-Ferroelectric-Memristor Architecture for an Energy-Efficient Neuromorphic Array.Nano letters · 2025Article
- Memristive Ion Dynamics to Enable Biorealistic Computing.Chemical reviews · 2025Review
- Thermally Oxidized Memristor and 1T1R Integration for Selector Function and Low-Power Memory.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
- A memristive-photoconductive transduction methodology for accurately nondestructive memory readout.Light, science & applications · 2024Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
11 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
As a promising candidate for high-density data storage and neuromorphic computing, cross-point memory arrays provide a platform to overcome the von Neumann bottleneck and accelerate neural network computation. In order to suppress the sneak-path current problem that limits their scalability and read accuracy, a two-terminal selector can be integrated at each cross-point to form the one-selector-one-memristor (1S1R) stack. In this work, we demonstrate a CuAg alloy-based, thermally stable and electroforming-free selector device with tunable threshold voltage and over 7 orders of magnitude ON/OFF ratio. A vertically stacked 64 × 64 1S1R cross-point array is further implemented by integrating the selector with SiO
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.