Evidence map›Paper›PMID 37270581›Full record

ArticleNature communications2023

Monolithically-grained perovskite solar cell with Mortise-Tenon structure for charge extraction balance.

Fangfang Wang, Mubai Li, Qiushuang Tian, Riming Sun, Hongzhuang Ma, Hongze Wang, Jingxi Chang, Zihao Li, Haoyu Chen, Jiupeng Cao and 20 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed.

  1. Modulation of Crystal Plane Growth for Efficient and Stable Perovskite Solar Cells.Angewandte Chemie (International ed. in English) · 2026
    Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

30 authors.

Fangfang WangKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.ORCID http://orcid.org/0000-0002-5441-4490
Mubai LiKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.ORCID http://orcid.org/0000-0003-0027-6368
Qiushuang TianKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Riming SunKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Hongzhuang MaKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Hongze WangKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Jingxi ChangKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Zihao LiKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Haoyu ChenKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Jiupeng CaoKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Aifei WangKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Jingjin DongKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
You LiuKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.ORCID http://orcid.org/0000-0002-3208-5921
Jinzheng ZhaoKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Ying ChuKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Suhao YanKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Zichao WuKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Jiaxin LiuKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Ya LiKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Xianglin ChenKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Ping GaoKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Yue SunKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Tingting LiuKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Wenbo LiuKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Renzhi LiKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Jianpu WangKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.ORCID http://orcid.org/0000-0002-2158-8689
Yi-Bing ChengAdvanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei, 430070, China.
Xiaogang LiuDepartment of Chemistry, National University of Singapore, Singapore, 117543, Singapore.ORCID http://orcid.org/0000-0003-2517-5790
Wei HuangKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China. iamwhuang@nwpu.edu.cn.ORCID http://orcid.org/0000-0001-7004-6408
Tianshi QinKey Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China. iamtsqin@njtech.edu.cn.ORCID http://orcid.org/0000-0002-2084-3537

Funding

National Natural Science Foundation of China (National Science Foundation of China) 62075094
6 · The paper itself

Abstract

Although the power conversion efficiency values of perovskite solar cells continue to be refreshed, it is still far from the theoretical Shockley-Queisser limit. Two major issues need to be addressed, including disorder crystallization of perovskite and unbalanced interface charge extraction, which limit further improvements in device efficiency. Herein, we develop a thermally polymerized additive as the polymer template in the perovskite film, which can form monolithic perovskite grain and a unique "Mortise-Tenon" structure after spin-coating hole-transport layer. Importantly, the suppressed non-radiative recombination and balanced interface charge extraction benefit from high-quality perovskite crystals and Mortise-Tenon structure, resulting in enhanced open-circuit voltage and fill-factor of the device. The PSCs achieve certified efficiency of 24.55% and maintain >95% initial efficiency over 1100 h in accordance with the ISOS-L-2 protocol, as well as excellent endurance according to the ISOS-D-3 accelerated aging test.

Identifiers

PMID37270581
PMCPMC10239504

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.