Evidence map›Paper›PMID 37242000›Full record

ArticleNanomaterials (Basel, Switzerland)2023

Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications.

Roman V Tominov, Zakhar E Vakulov, Vadim I Avilov, Ivan A Shikhovtsov, Vadim I Varganov, Victor B Kazantsev, Lovi Raj Gupta, Chander Prakash, Vladimir A Smirnov

Open access · goldAbstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
0.5field-weighted citation impact, top 37% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed, 4 citations in OpenAlex.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors at 2 institutions in 2 countries.

Roman V TominovResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.ORCID 0000-0002-1263-2158
Zakhar E VakulovResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.ORCID 0000-0003-3084-4522
Vadim I AvilovResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.
Ivan A ShikhovtsovResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.
Vadim I VarganovResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.
Victor B KazantsevResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.
Lovi Raj GuptaResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.ORCID 0000-0003-3474-0667
Chander PrakashResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.ORCID 0000-0003-0856-9712
Vladimir A SmirnovResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.ORCID 0000-0001-7130-2194
Southern Federal University · RULovely Professional University · IN

Funding

grant of the President of the Russian Federation MK-2290.2022.4Russian Federation Government Agreement No. 075-15-2022-1123Russian Science Foundation No. 21-79-00216
6 · The paper itself

Abstract

This paper proposes two different approaches to studying resistive switching of oxide thin films using scratching probe nanolithography of atomic force microscopy (AFM). These approaches allow us to assess the effects of memristor size and top-contact thickness on resistive switching. For that purpose, we investigated scratching probe nanolithography regimes using the Taguchi method, which is known as a reliable method for improving the reliability of the result. The AFM parameters, including normal load, scratch distance, probe speed, and probe direction, are optimized on the photoresist thin film by the Taguchi method. As a result, the pinholes with diameter ranged from 25.4 ± 2.2 nm to 85.1 ± 6.3 nm, and the groove array with a depth of 40.5 ± 3.7 nm and a roughness at the bottom of less than a few nanometers was formed. Then, based on the Si/TiN/ZnO/photoresist structures, we fabricated and investigated memristors with different spot sizes and TiN top contact thickness. As a result, the HRS/LRS ratio, U

Indexed as

artificial intelligencememristorneuromorphic systemspulsed laser depositionReRAMresistive switchingscratching probe nanolithographyTaguchi methodZnO thin films

Identifiers

PMID37242000
PMCPMC10223422
OpenAlexW4376115933

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.