Evidence map›Paper›PMID 37241425›Full record

ArticleMaterials (Basel, Switzerland)2023

Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics.

Guangliang Hu, Yinchang Shen, Lvkang Shen, Chunrui Ma, Ming Liu

Abstract read
In one paragraph

Article in Materials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Guangliang HuSchool of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
Yinchang ShenSchool of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
Lvkang ShenSchool of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
Chunrui MaState Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
Ming LiuSchool of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.

Funding

National Natural Science Foundation of China 51390472National Natural Science Foundation of China 51702255National Natural Science Foundation of China 62001371National Natural Science Foundation of China U2032168
6 · The paper itself

Abstract

In this work, we explored the potential of the ferroelectric gate of (Pb

Indexed as

ferroelectric filmflexible devicesGFETpolarization

Identifiers

PMID37241425
PMCPMC10221160

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.