ArticleMembranes2023
Wrinkled Thermo-Electric Meander-Shaped Element on a Thin Freestanding PDMS Membrane.
Article in Membranes, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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Who cites it
1 citing paper in PubMed, 2 citations in OpenAlex.
- Microengineered bone models: advances and applications of bone-on-a-chip technology.Journal of biological engineering · 2026Review
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Authors and funding
3 authors at 1 institution in 1 country.
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Abstract
Natural wrinkling of metal films on silicone substrates can appear by means of the metal sputtering process and can be described by the continuous elastic theory and non-linear wrinkling model. Here, we report the fabrication technology and behavior of thin freestanding Polydimethylsiloxane (PDMS) membranes equipped with thermo-electric meander-shaped elements. The Cr/Au wires were obtained on the silicone substrate by magnetron sputtering. We observe wrinkle formation and suppose furrows appear once PDMS returns to its initial state after the thermo-mechanical expansion during sputtering. Although the substrate thickness is usually a negligible parameter in the theory of wrinkle formation, we found that the self-assembled wrinkling architecture of the PDMS/Cr/Au varies due to the membrane thickness of 20 µm and 40 µm PDMS. We also demonstrate that the wrinkling of the meander wire affects its length, and it causes a 2.7 times higher resistance compared to a calculated value. Therefore, we investigate the influence of the PDMS mixing ratio on the thermo-electric meander-shaped elements. For the stiffer PDMS with a mixing ratio of 10:4, the resistance due to wrinkle amplitude alterations is 25% higher compared to the PDMS of ratio 10:1. Additionally, we observe and describe a thermo-mechanically induced motion behavior of the meander wires on completely freestanding PDMS membrane under applied current. These results can improve the understanding of wrinkle formation, which influences thermo-electric characteristics and may promote the integration of this technology in applications.
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