Evidence map›Paper›PMID 37200678›Full record

ArticleCarbon2021

Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC.

Shivi Rathore, Dinesh Kumar Patel, Mukesh Kumar Thakur, Golam Haider, Martin Kalbac, Mattias Kruskopf, Chieh-I Liu, Albert F Rigosi, Randolph E Elmquist, Chi-Te Liang and 1 more

Abstract read
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In one paragraph

Article in Carbon, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Shivi RathoreDepartment of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, 106335, Taiwan.
Dinesh Kumar PatelDepartment of Physics, National Taiwan University, Taipei, 106319, Taiwan.
Mukesh Kumar ThakurJ. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Prague 8, Czech Republic.
Golam HaiderJ. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Prague 8, Czech Republic.
Martin KalbacJ. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Prague 8, Czech Republic.
Mattias KruskopfPhysikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, D-38116, Braunschweig, Germany.
Chieh-I LiuPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg MD, 20899, USA.
Albert F RigosiPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg MD, 20899, USA.
Randolph E ElmquistPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg MD, 20899, USA.
Chi-Te LiangDepartment of Physics, National Taiwan University, Taipei, 106319, Taiwan.
Po-Da HongDepartment of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, 106335, Taiwan.

Funding

Intramural NIST DOC 9999-NIST
6 · The paper itself

Abstract

Due to weak light-matter interaction, standard chemical vapor deposition (CVD)/exfoliated single-layer graphene-based photodetectors show low photoresponsivity (on the order of mA/W). However, epitaxial graphene (EG) offers a more viable approach for obtaining devices with good photoresponsivity. EG on 4H-SiC also hosts an interfacial buffer layer (IBL), which is the source of electron carriers applicable to quantum optoelectronic devices. We utilize these properties to demonstrate a gate-free, planar EG/4H-SiC-based device that enables us to observe the positive photoresponse for (405-532) nm and negative photoresponse for (632-980) nm laser excitation. The broadband binary photoresponse mainly originates from the energy band alignment of the IBL/EG interface and the highly sensitive work function of the EG. We find that the photoresponsivity of the device is > 10 A/W under 405 nm of power density 7.96 mW/cm

Indexed as

Binary responseBroadband photodetectorEpitaxial grapheneSilicon carbide

Identifiers

PMID37200678
PMCPMC10190169

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.