Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
2 · The registry
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
5 · Who and what money
Authors and funding
14 authors.
Juntong ChenSchool of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China.ORCID 0009-0004-8827-5195
Jianxun LiuSchool of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China.
Yingnan HuangSchool of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China.ORCID 0000-0001-5731-2556
Ruisen LiuGuangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan 528000, China.
Yayu DaiSchool of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China.
Leming TangGuangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan 528000, China.
Zheng ChenGuangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan 528000, China.
Xiujian SunSchool of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China.
Chenshu LiuSchool of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China.
Shuming ZhangSchool of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China.
Qian SunSchool of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China.ORCID 0000-0001-5495-2232
Meixin FengSchool of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China.ORCID 0000-0002-3206-6990
Qiming XuGuSu Laboratory of Materials, Suzhou 215123, China.
Hui YangSchool of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China.
Funding
Bureau of International Cooperation 121E32KYSB20210002Guangdong Province Key-Area R&D Program 2019B090904002Guangdong Province Key-Area R&D Program 2019B090909004Guangdong Province Key-Area R&D Program 2019B090917005Guangdong Province Key-Area R&D Program 2020B010174004Jiangxi Double Thousand Plan S2018CQKJ0072Jiangxi Science and Technology Program 20212BDH80026Key R&D Program of Jiangsu Province BE2020004-2Key R&D Program of Jiangsu Province BE2021051Key Research Program of Frontier Sciences, CAS QYZDB-SSW-JSC014Key Research Program of Frontier Sciences, CAS ZDBS-LY-JSC040National Key R&D Program of China 2021YFB3601600National Key R&D Program of China 2022YFB2802801National Key R&D Program of China 2022YFB3604300National Key R&D Program of China 2022YFB3604802National Natural Science Foundation of China 61874131National Natural Science Foundation of China 62074158National Natural Science Foundation of China 62174174National Natural Science Foundation of China 62274177National Natural Science Foundation of China 62275263Strategic Priority Research Program of CAS XDB43000000Strategic Priority Research Program of CAS XDB43020200Suzhou Science and Technology Program SJC2021002Suzhou Science and Technology Program SYC2022089
6 · The paper itself
Abstract
Heteroepitaxial growth of high Al-content AlGaN often results in a high density of threading dislocations and surface hexagonal hillocks, which degrade the performance and reliability of AlGaN-based UVC light emitting diodes (LEDs). In this study, the degradation mechanism and impurity/defect behavior of UVC LEDs in relation to the hexagonal hillocks have been studied in detail. It was found that the early degradation of UVC LEDs is primarily caused by electron leakage. The prominent contribution of the hillock edges to the electron leakage is unambiguously evidenced by the transmission electron microscopy measurements, time-of-flight secondary ion mass spectrometry, and conductive atomic force microscopy. Dislocations bunching and segregation of impurities, including C, O, and Si, at the hillock edges are clearly observed, which facilitate the trap-assisted carrier tunneling in the multiple quantum wells and subsequent recombination in the p-AlGaN. This work sheds light on one possible degradation mechanism of AlGaN-based UVC LEDs.
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.
Hillock Related Degradation Mechanism for AlGaN-Based UVC LEDs. · full record | OpenQuestion