ArticleNature nanotechnology2023
Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature.
Article in Nature nanotechnology, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
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Who cites it
8 citing papers in PubMed.
- Room Temperature Control of Axial and Basal Antiferromagnetic Anisotropies Using Strain.ACS nano · 2025Article
- Controllable properties and versatile dynamics of meron topological magnetism in van der Waals multiferroic CuCrPiScience · 2025Article
- Deterministic switching of antiferromagnetic spin textures by nonlinear magnons.Nature communications · 2025Article
- Morphogenesis of spin cycloids in a noncollinear antiferromagnet.Proceedings of the National Academy of Sciences of the United States of America · 2025Article
- Article
- Spatially reconfigurable antiferromagnetic states in topologically rich free-standing nanomembranes.Nature materials · 2024Article
- Homochiral antiferromagnetic merons, antimerons and bimerons realized in synthetic antiferromagnets.Nature communications · 2024Article
- Intrinsic Néel Antiferromagnetic Multimeronic Spin Textures in Ultrathin Films.The journal of physical chemistry letters · 2023Article
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Authors and funding
16 authors.
Funding
Abstract
Topologically protected magnetic textures are promising candidates for information carriers in future memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. These textures-nanoscale whirls in the magnetic order-include skyrmions, half-skyrmions (merons) and their antiparticles. Antiferromagnets have been shown to host versions of these textures that have high potential for terahertz dynamics, deflection-free motion and improved size scaling due to the absence of stray field. Here we show that topological spin textures, merons and antimerons, can be generated at room temperature and reversibly moved using electrical pulses in thin-film CuMnAs, a semimetallic antiferromagnet that is a testbed system for spintronic applications. The merons and antimerons are localized on 180° domain walls, and move in the direction of the current pulses. The electrical generation and manipulation of antiferromagnetic merons is a crucial step towards realizing the full potential of antiferromagnetic thin films as active components in high-density, high-speed magnetic memory devices.
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