ArticleACS nano2023
Thickness Mapping and Layer Number Identification of Exfoliated van der Waals Materials by Fourier Imaging Micro-Ellipsometry.
Article in ACS nano, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
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9 citing papers in PubMed.
- Rolling Up Transition Metal Chalcogenides/Oxide Heterostructures Enables Polarity-Tunable and High-Switchable Memristors.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Direct Synthesis of Ultrathin Hexagonal Boron Nitride Films on Si(001).Nano letters · 2026Article
- Progress in Strain Engineering of 2D-Integrated Heterostructures for Ultrasensitive Sensors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Characterization of the 3D-Optical Properties of van der Waals Materials with Deep Learning-Based Coherent Fourier Scatterometry.ACS photonics · 2026Article
- High-Throughput Ellipsometric Contrast Microscopy of Lateral 2D Heterostructures for Optoelectronics.Small methods · 2026Article
- Multifunctional, energy-autonomous textile sensors enabled by spray-coated two-dimensional heterostructures.Npj flexible electronics · 2026Article
- Tip-Induced Etching and Vacancy Island Evolution on 2H-TaSThe journal of physical chemistry. C, Nanomaterials and interfaces · 2025Article
- Article
- Machine learning enabled fast optical identification and characterization of 2D materials.Scientific reports · 2024Article
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Authors and funding
7 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
As performance of van der Waals heterostructure devices is governed by the nanoscale thicknesses and homogeneity of their constituent mono- to few-layer flakes, accurate mapping of these properties with high lateral resolution becomes imperative. Spectroscopic ellipsometry is a promising optical technique for such atomically thin-film characterization due to its simplicity, noninvasive nature and high accuracy. However, the effective use of standard ellipsometry methods on exfoliated micron-scale flakes is inhibited by their tens-of-microns lateral resolution or slow data acquisition. In this work, we demonstrate a Fourier imaging spectroscopic micro-ellipsometry method with sub-5 μm lateral resolution and three orders-of-magnitude faster data acquisition than similar-resolution ellipsometers. Simultaneous recording of spectroscopic ellipsometry information at multiple angles results in a highly sensitive system, which is used for performing angstrom-level accurate and consistent thickness mapping on exfoliated mono-, bi- and trilayers of graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenide (MoS
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