ArticlePatterns (New York, N.Y.)2023
Machine-learning-assisted rational design of 2D doped tellurene for fin field-effect transistor devices.
Article in Patterns (New York, N.Y.), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
2 citing papers in PubMed.
- Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- When Machine Learning Meets 2D Materials: A Review.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Review
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
6 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Fin field-effect transistors (FinFETs) have been widely used in electronic devices on account of their excellent performance, but this new type of device is facing many challenges because of size constraints. Two-dimensional (2D) materials with a layer structure can meet the required thickness of FinFETs and provide ideal carrier transport performance. In this work, we used 2D tellurene as the parent material and modified it with doping techniques to improve electronic device performance. High-performance FinFET devices were prepared with 23 systems screened from 385 doping systems by a combination of first-principle calculations and a machine-learning (ML) model. Moreover, theoretical calculations demonstrated that 1S1@Te and 2S2@Te have high carrier mobility and stability with an electron mobility and a hole mobility of 6.211 × 10
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.