Evidence map›Paper›PMID 37115353›Full record

ReviewNano convergence2023

Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review.

Jongho Ji, Hoe-Min Kwak, Jimyeong Yu, Sangwoo Park, Jeong-Hwan Park, Hyunsoo Kim, Seokgi Kim, Sungkyu Kim, Dong-Seon Lee, Hyun S Kum

Erratum issuedAbstract readReview
In one paragraph

Review in Nano convergence, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. An erratum has been issued. Cited by 7 papers.

0numbers the graph read from it
0cells of the map it votes in
7citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

7 citing papers in PubMed.

  1. Review
  2. Development of a ReaxFF Reactive Force Field for the Crystallization of van der Waals-Layered Bismuth Selenide.The journal of physical chemistry. C, Nanomaterials and interfaces · 2026
    Article
  3. Review
  4. Review
  5. Article
  6. Review
  7. Article
4 · The record

Corrections and comments

5 · Who and what money

Authors and funding

10 authors.

Jongho Ji *Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea.
Hoe-Min Kwak *School of Electrical Engineering and Computer Science, Gwnagju Institute of Science and Technology, Gwangju, South Korea.
Jimyeong Yu *Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea.
Sangwoo ParkDepartment of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea.
Jeong-Hwan ParkVenture Business Laboratory, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya, 464-8603, Japan.
Hyunsoo KimDepartment of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea.
Seokgi KimDepartment of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea.
Sungkyu KimDepartment of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea. sungkyu@sejong.ac.kr.
Dong-Seon LeeSchool of Electrical Engineering and Computer Science, Gwnagju Institute of Science and Technology, Gwangju, South Korea. dslee66@gist.ac.kr.
Hyun S KumDepartment of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea. hkum@yonsei.ac.kr.ORCID http://orcid.org/0000-0002-8009-569X

Funding

National Research Foundation of Korea NRF-2021R1C1C1008949National Research Foundation of Korea NRF-2022M3D1A2085227National Research Foundation of Korea NRF-2022M3D1A2085228National Research Foundation of Korea NRF-2022R1A2C2012462
6 · The paper itself

Abstract

Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in recent years. Although the technology seemed to be difficult to reproduce by other labs at first, remote epitaxy has come a long way and many groups are able to consistently reproduce the results with a wide range of material systems including III-V, III-N, wide band-gap semiconductors, complex-oxides, and even elementary semiconductors such as Ge. As with any nascent technology, there are critical parameters which must be carefully studied and understood to allow wide-spread adoption of the new technology. For remote epitaxy, the critical parameters are the (1) quality of two-dimensional (2D) materials, (2) transfer or growth of 2D materials on the substrate, (3) epitaxial growth method and condition. In this review, we will give an in-depth overview of the different types of 2D materials used for remote epitaxy reported thus far, and the importance of the growth and transfer method used for the 2D materials. Then, we will introduce the various growth methods for remote epitaxy and highlight the important points in growth condition for each growth method that enables successful epitaxial growth on 2D-coated single-crystalline substrates. We hope this review will give a focused overview of the 2D-material and substrate interaction at the sample preparation stage for remote epitaxy and during growth, which have not been covered in any other review to date.

Indexed as

Complex-oxideCompound semiconductorGrapheneh-BNHeterogeneous integrationMBEMOCVDPLDRemote epitaxyTMDC

Identifiers

PMID37115353
PMCPMC10147895

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.