The Process and Mechanism of Preparing Nanoporous Silicon: Helium Ion Implantation.

Jianguang Wang, Kelin Zhu, Xiaoling Wu, Guoan Cheng, Ruiting Zheng

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

Investigation of the Optical Nonlinearity for Au Plasmonic Nanoparticles Based on Ion Implantation.Nanomaterials (Basel, Switzerland) · 2023
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Jianguang WangKey Laboratory of Radiation Beam Technology and Materials Modification of the Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.

Kelin ZhuKey Laboratory of Radiation Beam Technology and Materials Modification of the Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.

Xiaoling WuKey Laboratory of Radiation Beam Technology and Materials Modification of the Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.

Guoan ChengKey Laboratory of Radiation Beam Technology and Materials Modification of the Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.ORCID 0000-0002-0652-2534

Ruiting ZhengKey Laboratory of Radiation Beam Technology and Materials Modification of the Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.

Funding

National Natural Science Foundation of China U1832176National Nature Science Foundation of China 12175020the Interdisciplinary project of the Beijing Nova Program 2019018

6 · The paper itself

Abstract

Ion implantation is an effective way to control performance in semiconductor technology. In this paper, the fabrication of 1~5 nm porous silicon by helium ion implantation was systemically studied, and the growth mechanism and regulation mechanism of helium bubbles in monocrystalline silicon at low temperatures were revealed. In this work, 100 keV He ions (1~7.5 × 10

Indexed as

1~55 nm diameter helium bubblehelium ion implantationmechanism of growthporous silicon

Identifiers

PMID37110909

DOI10.3390/nano13081324

PMCPMC10141629

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.