Evidence map›Paper›PMID 37091246›Full record

ArticleiScience2023

Multilevel resistive switching in stable all-inorganic

Shuaibo Zhai, Jiaqi Gong, Yifei Feng, Zhongbao Que, Weiwei Mao, Xuemin He, Yannan Xie, Xing'ao Li, Liang Chu

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in iScience, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed.

  1. HfOScience advances · 2026
    Article
  2. Article
  3. Interstitial AgNanomaterials (Basel, Switzerland) · 2025
    Article
  4. Advances in Metal Halide Perovskite Memristors: A Review from a Co-Design Perspective.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Review
  5. Article
  6. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Shuaibo ZhaiSchool of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Jiaqi GongSchool of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Yifei FengSchool of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Zhongbao QueSchool of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Weiwei MaoSchool of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Xuemin HeSchool of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Yannan XieSchool of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Xing'ao LiSchool of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Liang ChuInstitute of Carbon Neutrality and New Energy, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Memristors are promising information storage devices for commercial applications because of their long endurance and low power consumption. Particularly, perovskite memristors have revealed excellent resistive switching (RS) properties owing to the fast ion migration and solution fabrication process. Here, an n-i-p type double perovskite memristor with "ITO/SnO

Indexed as

Applied physicsDevicesMagnetic materials

Identifiers

PMID37091246
PMCPMC10119588

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.