Evidence map›Paper›PMID 37088736›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2023

High-Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback.

Vigneshwaran Chandrasekaran, Michael Titze, Anthony R Flores, Deanna Campbell, Jacob Henshaw, Andrew C Jones, Edward S Bielejec, Han Htoon

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Vigneshwaran ChandrasekaranCenter for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.ORCID https://orcid.org/0000-0002-6014-9953
Michael TitzeSandia National Laboratories, Albuquerque, NM, 87123, USA.ORCID https://orcid.org/0000-0003-4701-4453
Anthony R FloresSandia National Laboratories, Albuquerque, NM, 87123, USA.
Deanna CampbellSandia National Laboratories, Albuquerque, NM, 87123, USA.ORCID https://orcid.org/0000-0002-3505-1065
Jacob HenshawCenter for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87123, USA.ORCID https://orcid.org/0000-0002-5333-1140
Andrew C JonesCenter for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.
Edward S BielejecSandia National Laboratories, Albuquerque, NM, 87123, USA.ORCID https://orcid.org/0000-0002-3386-5161
Han HtoonCenter for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.ORCID https://orcid.org/0000-0003-3696-2896

Funding

Deterministic Placement and Integration of Quantum Defect DOE-BES-LANL-E3QROffice of Science User Facility jointly operated for the U.S. Department of Energy (DOE) Office of Science by Sandia National Laboratories and Los Alamos National Laboratory 89233218CNA000001Office of Science User Facility jointly operated for the U.S. Department of Energy (DOE) Office of Science by Sandia National Laboratories and Los Alamos National Laboratory DE-NA-0003525
6 · The paper itself

Abstract

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created-a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.

Indexed as

ElectronicsPhotonsFeedbackSemiconductorsfocused ion beamin situ photoluminescencequantum defectssilicon carbidesingle photon sources

Identifiers

PMID37088736
PMCPMC10288259

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.