ArticleScience advances2023
Resistless EUV lithography: Photon-induced oxide patterning on silicon.
Article in Science advances, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- The Evolution of Lithography: From Resolution Scaling to Manufacturing Constraints.Micromachines · 2026Review
- Article
- Polytelluoxane as the ideal formulation for EUV photoresist.Science advances · 2025Article
- Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography.Micromachines · 2024Review
- EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning.Nature communications · 2024Article
Corrections and comments
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Authors and funding
10 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated silicon (100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons can induce surface reactions on a partially hydrogen-terminated silicon surface and assist the growth of an oxide layer, which serves as an etch mask. This mechanism is different from the hydrogen desorption in scanning tunneling microscopy-based lithography. We achieve silicon dioxide/silicon gratings with 75-nanometer half-pitch and 31-nanometer height, demonstrating the efficacy of the method and the feasibility of patterning with EUV lithography without the use of a photoresist. Further development of the resistless EUV lithography method can be a viable approach to nanometer-scale lithography by overcoming the inherent resolution and roughness limitations of photoresist materials.
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Registered trials
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