Evidence map›Paper›PMID 37041232›Full record

ArticleScientific reports2023

Deep-trap dominated degradation of the endurance characteristics in OFET memory with polymer charge-trapping layer.

Tianpeng Yu, Zhenliang Liu, Yiru Wang, Lunqiang Zhang, Shuyi Hou, Zuteng Wan, Jiang Yin, Xu Gao, Lei Wu, Yidong Xia and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Scientific reports, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Tianpeng YuCollege of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China.
Zhenliang LiuCollege of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China.
Yiru WangState Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing, 210023, People's Republic of China.
Lunqiang ZhangCollege of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China.
Shuyi HouCollege of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China.
Zuteng WanCollege of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China.
Jiang YinCollege of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China. jyin@nju.edu.cn.
Xu GaoInstitute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, Jiangsu, People's Republic of China. gaoxu@suda.edu.cn.
Lei WuCollege of Electrical Engineering, Nanjing Vocational University of Industry Technology, Nanjing, 210023, People's Republic of China.
Yidong XiaCollege of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China.
Zhiguo LiuCollege of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Organic field-effect transistors (OFETs) with polymer charge-trapping dielectric, which exhibit many advantages over Si-based memory devices such as low cost, light weight, and flexibility, still suffer challenges in practical application due to the unsatisfied endurance characteristics and even the lack of fundamental of behind mechanism. Here, we revealed that the degradation of endurance characteristics of pentacene OFET with poly(2-vinyl naphthalene) (PVN) as charge-storage layer is dominated by the deep hole-traps in PVN by using the photo-stimulated charge de-trapping technique with the fiber-coupled monochromatic-light probes. The depth distribution of hole-traps in PVN film of pentacene OFET is also provided.

Identifiers

PMID37041232
PMCPMC10090149

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.