ArticleMicrosystems & nanoengineering2023
Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments.
Article in Microsystems & nanoengineering, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 16 papers.
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Who cites it
16 citing papers in PubMed.
- Performance Evolution and Research Progress of Silicon Carbide Sensors in Radiation Environments: A Review.Micromachines · 2026Review
- In Situ Cold-Junction Compensation Strategy for Semiconductor Thin-Film Thermocouples Based on a Pt Thin-Film Resistance Temperature Detector.Sensors (Basel, Switzerland) · 2026Article
- Low-Temperature Visual Mechanical Sensing via Uniaxial Compression of Blue Phase Liquid Crystal Elastomer.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Advances in silicon carbide pressure sensors for high-temperature extreme environment sensing.Microsystems & nanoengineering · 2026Review
- Ultraviolet Photodetectors Based on 4H-SiC With Honeycomb-Like Light-Trapping Structures.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Advances in flexible wearable pressure/strain sensors for motion monitoring in orthopaedic sports medicine.Journal of orthopaedic translation · 2026Review
- A ceramic-based ITON piezoresistive pressure sensor with wide temperature range (RT-900 °C) and broad frequency response.Microsystems & nanoengineering · 2025Article
- A Review of the Research Progress of Sensor Monitoring Technology in Harsh Engineering Environments.Sensors (Basel, Switzerland) · 2025Review
- Highly customizable, ultrawide-temperature free-form flexible sensing electronic systems based on medium-entropy alloy paintings.Nature communications · 2025Article
- Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments.Microsystems & nanoengineering · 2025Article
- Design and fabrication of a LEG based stretchable piezoresistive acoustic pressure sensor for ultra low pressures.Scientific reports · 2025Article
- Fabrication and Electrical Characterization of Low-Temperature Polysilicon Films for Sensor Applications.Micromachines · 2024Article
- Pt thin-film resistance thermo detectors with stable interfaces for potential integration in SiC high-temperature pressure sensors.Microsystems & nanoengineering · 2024Article
- A resonant high-pressure microsensor based on a composite pressure-sensitive mechanism of diaphragm bending and volume compression.Microsystems & nanoengineering · 2024Article
- Unraveling the nature of sensing in electrostatic MEMS gas sensors.Microsystems & nanoengineering · 2024Article
- Emerging SiC Applications beyond Power Electronic Devices.Micromachines · 2023Review
Corrections and comments
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Authors and funding
11 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Microelectromechanical system (MEMS) pressure sensors based on silicon are widely used and offer the benefits of miniaturization and high precision. However, they cannot easily withstand high temperatures exceeding 150 °C because of intrinsic material limits. Herein, we proposed and executed a systematic and full-process study of SiC-based MEMS pressure sensors that operate stably from -50 to 300 °C. First, to explore the nonlinear piezoresistive effect, the temperature coefficient of resistance (TCR) values of 4H-SiC piezoresistors were obtained from -50 to 500 °C. A conductivity variation model based on scattering theory was established to reveal the nonlinear variation mechanism. Then, a piezoresistive pressure sensor based on 4H-SiC was designed and fabricated. The sensor shows good output sensitivity (3.38 mV/V/MPa), accuracy (0.56% FS) and low temperature coefficient of sensitivity (TCS) (-0.067% FS/°C) in the range of -50 to 300 °C. In addition, the survivability of the sensor chip in extreme environments was demonstrated by its anti-corrosion capability in H
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