Modeling and Simulation Investigation of Ferroelectric-Based Electrostatic Doping for Tunnelling Field-Effect Transistor.

Dong Wang, Hongxia Liu, Hao Zhang, Ming Cai, Jinfu Lin

Open access · goldAbstract read

In one paragraph

Article in Micromachines, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

0.7field-weighted citation impact, top 33% of its field

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed, 5 citations in OpenAlex.

A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors.Micromachines · 2025
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors at 1 institution in 1 country.

Dong WangKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.ORCID 0000-0001-8848-7797

Hongxia LiuKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.ORCID 0000-0003-4547-0666

Hao ZhangKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.ORCID 0000-0001-9618-8746

Ming CaiKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.ORCID 0000-0003-3191-684X

Jinfu LinKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.

Xidian University · CN

Funding

National Natural Science Foundation of China 2241221

6 · The paper itself

Abstract

In this paper, a novel ferroelectric-based electrostatic doping (Fe-ED) nanosheet tunneling field-effect transistor (TFET) is proposed and analyzed using technology computer-aided design (TCAD) Sentaurus simulation software. By inserting a ferroelectric film into the polarity gate, the electrons and holes are induced in an intrinsic silicon film to create the p-source and the n-drain regions, respectively. Device performance is largely independent of the chemical doping profile, potentially freeing it from issues related to abrupt junctions, dopant variability, and solid solubility. An improved ON-state current and I

Indexed as

electrostatic dopingferroelectricitypolarity gateTCADtunneling field-effect transistor

Identifiers

PMID36985079

DOI10.3390/mi14030672

PMCPMC10051887

OpenAlexW4327955875

What OpenQuestion holds

Textmetadata

LicenceCC BY

Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.