ArticleMaterials (Basel, Switzerland)2023
Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method.
Article in Materials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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3 citing papers in PubMed.
- Cerium-Doped ZnO Thin Films for Photocatalysts.Materials (Basel, Switzerland) · 2026Article
- Effect of Co-Doping of AlMaterials (Basel, Switzerland) · 2024Article
- Green Synthesis of Er-Doped ZnO Nanoparticles: An Investigation on the Methylene Blue, Eosin, and Ibuprofen Removal by Photodegradation.Molecules (Basel, Switzerland) · 2024Article
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Abstract
Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a function of different Al doping concentrations. The X-ray diffraction profiles indicated that the films had a nanocrystalline structure of ZnO with a (0 0 2) preferential orientation. An increase in the Al doping concentration deteriorated the (0 0 2) diffraction peak intensity. The transmittance measurements in the UV-Vis wavelength range indicated that the film's optical gap increased with increase in Al doping concentration. The heterojunction parameters were evaluated using the current-voltage (
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