ArticleMaterials (Basel, Switzerland)2023
Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices.
Article in Materials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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Who cites it
2 citing papers in PubMed.
- Integration of LASER Diodes Emitting at Eight Different Wavelengths from Blue to Infrared on a 4H-SiC-Based Optical Integration Platform.Materials (Basel, Switzerland) · 2026Article
- LightIN: a versatile silicon-integrated photonic field programmable gate array with an intelligent configuration framework for next-generation AI clusters.Light, science & applications · 2026Article
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Authors and funding
5 authors.
Funding
Abstract
Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstly, we develop a wet-oxidation-assisted chemical mechanical polishing (CMP) process for 4H-SiC, which can significantly decrease the surface roughness from 3.67 nm to 0.15 nm, thus mitigating the light scattering loss. Secondly, we find that the thermal annealing of the 4H-SiC devices at 1300 °C can help to decrease the material absorption loss. We experimentally demonstrate that the wet-oxidation-assisted CMP and the high-temperature annealing can effectively increase the intrinsic quality factor of the 4H-SiC optical microring resonators.
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