ArticleACS omega2023
Role of Chalcogen Defect Introducing Metal-Induced Gap States and Its Implications for Metal-TMDs' Interface Chemistry.
Article in ACS omega, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
4 citing papers in PubMed, 20 citations in OpenAlex.
- Hole Current Enhancement Using WACS applied materials & interfaces · 2025Article
- Metal-assisted vacuum transfer enabling in situ visualization of charge density waves in monolayer MoSScience advances · 2025Article
- A DFT study of superior adsorbate-surface bonding at Pt-WSeScientific reports · 2024Article
- Defects and Defect Engineering of Two-Dimensional Transition Metal Dichalcogenide (2D TMDC) Materials.Nanomaterials (Basel, Switzerland) · 2024Review
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Authors and funding
2 authors at 1 institution in 1 country.
Funding
No grant is acknowledged in the PubMed record.
Abstract
The contact resistance of the transition metal dichalcogenide (TMD) devices is not comparable to that of their silicon counterparts, probably due to a lack of clarity in their interface chemistry. Looking beyond the conventional Schottky-Mott rule, the metal chalcogen orbital overlaps, tunnel barrier, and metal-induced gap states (MIGSs) are crucial factors determining different metals' contact properties with TMDs. Exploring their properties helps TMDs' contact resistance engineering, driven mainly by their orbital overlaps and perturbing parameters. This work presents the interface chemistry of TMDs (MoS
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Registered trials
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