Evidence map›Paper›PMID 36950705›Full record

ArticleRSC advances2023

Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors

Mohamed A Nawwar, Magdy S Abo Ghazala, Lobna M Sharaf El-Deen, Badawi Anis, Abdelhamid El-Shaer, Ahmed Mourtada Elseman, Mohamed M Rashad, Abd El-Hady B Kashyout

Erratum issuedAbstract read
In one paragraph

Article in RSC advances, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. An erratum has been issued. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Article
  2. Article
  3. Dark Current Analysis on GeSnSensors (Basel, Switzerland) · 2023
    Article
4 · The record

Corrections and comments

5 · Who and what money

Authors and funding

8 authors.

Mohamed A NawwarPhysics Department, Faculty of Science, Menoufia University Shebin El-Koom Menoufia 32511 Egypt mohamed.nawwar@science.menofia.edu.eg.ORCID https://orcid.org/0000-0002-2837-8115
Magdy S Abo GhazalaPhysics Department, Faculty of Science, Menoufia University Shebin El-Koom Menoufia 32511 Egypt mohamed.nawwar@science.menofia.edu.eg.
Lobna M Sharaf El-DeenPhysics Department, Faculty of Science, Menoufia University Shebin El-Koom Menoufia 32511 Egypt mohamed.nawwar@science.menofia.edu.eg.
Badawi AnisSpectroscopy Department, Physics Research Institute, National Research Centre 33 El Bohouth St., Dokki 12622 Giza Egypt.
Abdelhamid El-ShaerPhysics Department, Faculty of Science, Kafrelsheikh University KafrelSheikh 33516 Egypt.
Ahmed Mourtada ElsemanElectronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City) New Borg El-Arab City Alexandria 21943 Egypt.ORCID https://orcid.org/0000-0001-9297-9866
Mohamed M RashadElectronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City) New Borg El-Arab City Alexandria 21943 Egypt.ORCID https://orcid.org/0000-0002-7482-9693
Abd El-Hady B KashyoutElectronic & Magnetic Materials Department, Advanced Materials Institute, Central Metallurgical Research & Development Institute (CMRDI) 11421 Helwan-Cairo Egypt akashyout@srtacity.sci.eg.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

GeSn compounds have made many interesting contributions in photodetectors (PDs) over the last ten years, as they have a detection limit in the NIR and mid-IR region. Sn incorporation in Ge alters the cut off wavelength. In the present article, p-i-n structures based on GeSn junctions were fabricated to serve as PDs. Arsine (As) is incorporated to develop n-GeSn compounds

Identifiers

PMID36950705
PMCPMC10025945

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.