ArticleACS applied materials & interfaces2023
The First-Water-Layer Evolution at the Graphene/Water Interface under Different Electro-Modulated Hydrophilic Conditions Observed by Suspended/Supported Field-Effect-Device Architectures.
Article in ACS applied materials & interfaces, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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3 citing papers in PubMed.
- An Elucidation of Substrate Effects in Graphene-Based Sensing Characteristics─Interfaces between Organic Solvent and Graphene.ACS sensors · 2025Article
- Nanoscopic Supercapacitance Elucidations of the Graphene-Ionic Interface with Suspended/Supported Graphene in Different Ionic Solutions.ACS applied materials & interfaces · 2025Article
- Aqueous chemimemristor based on proton-permeable graphene membranes.Proceedings of the National Academy of Sciences of the United States of America · 2024Article
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8 authors.
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Abstract
Interfacial water molecules affect carrier transportation within graphene and related applications. Without proper tools, however, most of the previous works focus on simulation modeling rather than experimental validation. To overcome this obstacle, a series of graphene field-effect transistors (GFETs) with suspended (substrate-free, SF) and supported (oxide-supported, OS) configurations are developed to investigate the graphene-water interface under different hydrophilic conditions. With deionized water environments, in our experiments, the electrical transportation behaviors of the graphene mainly originate from the evolution of the interfacial water-molecule arrangement. Also, these current-voltage behaviors can be used to elucidate the first-water layer at the graphene-water interface. For SF-GFET, our experimental results show positive hysteresis in electrical transportation. These imply highly ordered interfacial water molecules with a separated-ionic distributed structure. For OS-GFET, on the contrary, the negative hysteresis shows the formation of the hydrogen-bond interaction between the interfacial water layer and the SiO
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