Evidence map›Paper›PMID 36939429›Full record

ReviewResearch (Washington, D.C.)2023

Modifying the Power and Performance of 2-Dimensional MoS

Fulin Zhuo, Jie Wu, Binhong Li, Moyang Li, Chee Leong Tan, Zhongzhong Luo, Huabin Sun, Yong Xu, Zhihao Yu

Full text readReview
In one paragraph

Review in Research (Washington, D.C.), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.

0numbers the graph read from it
0cells of the map it votes in
10citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

10 citing papers in PubMed.

  1. Strategic Mobility Engineering in 2D Semiconductor-based FETs for Enhanced Electronic Devices.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Review
  2. Wafer-Scale Demonstration of BEOL-Compatible Ambipolar MoSACS applied materials & interfaces · 2025
    Article
  3. Article
  4. Native GaN/GaOResearch (Washington, D.C.) · 2025
    Article
  5. Article
  6. Article
  7. Review
  8. Review
  9. Article
  10. A High-Performance MoSResearch (Washington, D.C.) · 2023
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Fulin ZhuoCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Jie WuCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Binhong LiGuangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Moyang LiCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Chee Leong TanCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Zhongzhong LuoCollege of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Huabin SunCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Yong XuCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Zhihao YuCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Over the past 60 years, the semiconductor industry has been the core driver for the development of information technology, contributing to the birth of integrated circuits, Internet, artificial intelligence, and Internet of Things. Semiconductor technology has been evolving in structure and material with co-optimization of performance-power-area-cost until the state-of-the-art sub-5-nm node. Two-dimensional (2D) semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes. In the recent 10 years, the key issues on 2D semiconductors regarding material, processing, and integration have been overcome in sequence, making 2D semiconductors already on the verge of application. In this paper, the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors. We mainly focus on the optimization strategies of mobility (

Identifiers

PMID36939429
PMCPMC10016345

What OpenQuestion holds

Textfull text, public
LicenceCC BY
measurements read34
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.