Evidence map›Paper›PMID 36935362›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2023

Addressing the Conflict between Mobility and Stability in Oxide Thin-film Transistors.

Lingyan Liang, Hengbo Zhang, Ting Li, Wanfa Li, Junhua Gao, Hongliang Zhang, Min Guo, Shangpeng Gao, Zirui He, Fengjuan Liu and 4 more

Abstract read
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Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Article
  2. Article
  3. Article
  4. Addressing the Conflict between Mobility and Stability in Oxide Thin-film Transistors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2023
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Lingyan LiangLaboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.ORCID https://orcid.org/0000-0002-6285-6600
Hengbo ZhangLaboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
Ting LiLaboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
Wanfa LiLaboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
Junhua GaoLaboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
Hongliang ZhangLaboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
Min GuoState Key Lab of Opto-Electronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, P. R. China.
Shangpeng GaoDepartment of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
Zirui HeDepartment of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
Fengjuan LiuLaboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
Ce NingBOE Technology Group Co. Ltd., Beijing, 100176, P. R. China.
Hongtao CaoCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Guangcai YuanBOE Technology Group Co. Ltd., Beijing, 100176, P. R. China.
Chuan LiuState Key Lab of Opto-Electronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, P. R. China.

Funding

Chinese Academy of Sciences ZDRW-XX-2022-2National Key Research and Development Program of China 2021YFB3600701National Natural Science Foundation of China 61922090National Natural Science Foundation of China 62274167Natural Science Foundation of Zhejiang Province LD21F040002Ningbo Key Scientific and Technological Project 2021Z116
6 · The paper itself

Abstract

Amorphous oxide semiconductor thin-film transistors (AOS TFTs) are ever-increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility-stability conflict. The charge transport layer (CTL) is made of amorphous In-rich InSnZnO, which favors big average effective coordination number for all cations and more edge-shared structures for better charge transport. Praseodymium-doped InSnZnO is used as the charge relaxation layer (CRL), which substantially shortens the photoelectron lifetime as revealed by femtosecond transient absorption spectroscopy. The CTL and CRL with the thickness suitable for industrial production respectively afford minute potential barrier fluctuation for charge transport and fast relaxation for photo-generated carriers, resulting in transistors with an ultrahigh mobility (75.5 cm

Indexed as

carrier relaxationmetal oxide semiconductorspercolation theoryphotocarrier lifetimethin-film transistors

Identifiers

PMID36935362
PMCPMC10190610

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.