ArticleACS applied materials & interfaces2023
Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material.
Article in ACS applied materials & interfaces, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- Theoretical study of electronic structure, lone pair localization, and electronic transport properties of unconventional bulk and 2D γ-SnSe and γ-SnS.RSC advances · 2025Article
- Epitaxial CuACS applied materials & interfaces · 2025Article
- The Role of Counteranions in Solution Deposition of ZnS Thin Films on GaAs.Inorganic chemistry · 2024Article
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Authors and funding
10 authors.
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Abstract
We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.
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