Evidence map›Paper›PMID 36910941›Full record

ReviewACS omega2023

Surface Photovoltage Study of Metal Halide Perovskites Deposited Directly on Crystalline Silicon.

Vesselin Donchev, Davide Regaldo, Stefan Georgiev, Aleksandra Bojar, Mattia da Lisca, Kiril Kirilov, José Alvarez, Philip Schulz, Jean-Paul Kleider

Abstract readReview
In one paragraph

Review in ACS omega, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Vesselin DonchevFaculty of Physics, Sofia University, 5, blvd. J.Bourchier, BG-1164 Sofia, Bulgaria.ORCID https://orcid.org/0000-0003-3812-4474
Davide RegaldoLaboratoire de Génie Electrique et Electronique de Paris, Université Paris-Saclay, CentraleSupélec, CNRS, 91192 Gif-sur-Yvette, France.ORCID https://orcid.org/0000-0002-6905-9479
Stefan GeorgievFaculty of Physics, Sofia University, 5, blvd. J.Bourchier, BG-1164 Sofia, Bulgaria.
Aleksandra BojarLaboratoire de Génie Electrique et Electronique de Paris, Université Paris-Saclay, CentraleSupélec, CNRS, 91192 Gif-sur-Yvette, France.
Mattia da LiscaLaboratoire de Génie Electrique et Electronique de Paris, Université Paris-Saclay, CentraleSupélec, CNRS, 91192 Gif-sur-Yvette, France.
Kiril KirilovFaculty of Physics, Sofia University, 5, blvd. J.Bourchier, BG-1164 Sofia, Bulgaria.
José AlvarezLaboratoire de Génie Electrique et Electronique de Paris, Université Paris-Saclay, CentraleSupélec, CNRS, 91192 Gif-sur-Yvette, France.
Philip SchulzIPVF, Institut Photovoltaïque d'Ile-de-France, 91120 Palaiseau France.ORCID https://orcid.org/0000-0002-8177-0108
Jean-Paul KleiderLaboratoire de Génie Electrique et Electronique de Paris, Université Paris-Saclay, CentraleSupélec, CNRS, 91192 Gif-sur-Yvette, France.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Perovskite (PVK) films deposited directly on n-type crystalline Si substrates were investigated by two operating modes of the surface photovoltage (SPV) method: (i) the metal-insulator-semiconductor (MIS) mode and (ii) the Kelvin probe force microscopy (KPFM). By scanning from 900 to 600 nm in the MIS mode, we consecutively studied the relatively fast processes of carrier generation, transport, and recombination first in Si, then on both sides of the PVK/Si interface, and finally in the PVK layer and its surface. The PVK optical absorption edge was observed in the range of 1.61-1.65 eV in good agreement with the band gap of 1.63 eV found from photoluminescence spectra. Both SPV methods evidenced an upward energy band bending at the PVK/n-Si interface generating positive SPV. Drift-diffusion modeling allowed us to analyze the shape of the wavelength dependence of the SPV. It was also observed that the intense illumination in the KPFM measurements induces slow SPV transients which were explained by the creation and migration of negative ions and their trapping at the PVK surface. Finally, aging effects were studied by measuring again SPV spectra after one-year storage in air, and an increase in the concentration of shallow defect states at the PVK/n-Si interface was found.

Identifiers

PMID36910941
PMCPMC9996577

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.