Epitaxial CdSe/PbSe Heterojunction Growth and MWIR Photovoltaic Detector.

Lance L McDowell, Milad Rastkar Mirzaei, Zhisheng Shi

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Article in Materials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

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Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

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0 citing papers in PubMed.

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4 · The record

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5 · Who and what money

Authors and funding

3 authors.

Lance L McDowellThe School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019, USA.

Milad Rastkar MirzaeiThe School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019, USA.ORCID 0000-0001-7654-7924

Zhisheng ShiThe School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019, USA.ORCID 0000-0003-3669-1918

Funding

United States Army Research Office W911NF-18-1-0418

6 · The paper itself

Abstract

A novel Epitaxial Cadmium Selenide (CdSe) on Lead Selenide (PbSe) type-II heterojunction photovoltaic detector has been demonstrated by Molecular Beam Epitaxy (MBE) growth of n-type CdSe on p-type PbSe single crystalline film. The use of Reflection High-Energy Electron Diffraction (RHEED) during the nucleation and growth of CdSe indicates high-quality single-phase cubic CdSe. This is a first-time demonstration of single crystalline and single phase CdSe growth on single crystalline PbSe, to the best of our knowledge. The current-voltage characteristic indicates a p-n junction diode with a rectifying factor over 50 at room temperature. The detector structure is characterized by radiometric measurement. A 30 μm × 30 μm pixel achieved a peak responsivity of 0.06

Indexed as

CdSeepitaxial growthheterostructurelead-chalcogenidesMBEmid-infrared detectorPbSephotovoltaic detectorRHEED

Identifiers

PMID36902982

DOI10.3390/ma16051866

PMCPMC10004645

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.