ArticleACS nano2023
Tungsten Oxide Mediated Quasi-van der Waals Epitaxy of WS
Article in ACS nano, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
9 citing papers in PubMed.
- Wafer-scale synthesis of WSeScience advances · 2026Article
- Homo-metal-element mediated surface modification of sapphire for robust epitaxy of wafer-scale single-crystalline 2D semiconductors.Nature communications · 2026Article
- Low-Temperature Ammonia Sensing Using Sulfurized WSSensors (Basel, Switzerland) · 2026Article
- Directionally Locked Heteroepitaxy with a Structurally Modulated van der Waals Material.ACS nano · 2026Article
- Low Temperature MOCVD Synthesis of High-Mobility 2D InSe.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Evidence of air-induced surface transformation of atomic step-engineered sapphire in relation to epitaxial growth of 2D semiconductors.Nature communications · 2025Article
- Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals.Advanced materials (Deerfield Beach, Fla.) · 2024Article
- Support-Based Transfer and Contacting of Individual Nanomaterials for In Situ Nanoscale Investigations.Small methods · 2024Article
- Designing transition metal-based porous architectures for supercapacitor electrodes: a review.RSC advances · 2024Review
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
12 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Conventional epitaxy plays a crucial role in current state-of-the art semiconductor technology, as it provides a path for accurate control at the atomic scale of thin films and nanostructures, to be used as the building blocks in nanoelectronics, optoelectronics, sensors, etc. Four decades ago, the terms "van der Waals" (vdW) and "quasi-vdW (Q-vdW) epitaxy" were coined to explain the oriented growth of vdW layers on 2D and 3D substrates, respectively. The major difference with conventional epitaxy is the weaker interaction between the epi-layer and the epi-substrates. Indeed, research on Q-vdW epitaxial growth of transition metal dichalcogenides (TMDCs) has been intense, with oriented growth of atomically thin semiconductors on sapphire being one of the most studied systems. Nonetheless, there are some striking and not yet understood differences in the literature regarding the orientation registry between the epi-layers and epi-substrate and the interface chemistry. Here we study the growth of WS
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.