Evidence map›Paper›PMID 36872383›Full record

ArticleLight, science & applications2023

Bright semiconductor single-photon sources pumped by heterogeneously integrated micropillar lasers with electrical injections.

Xueshi Li, Shunfa Liu, Yuming Wei, Jiantao Ma, Changkun Song, Ying Yu, Rongbin Su, Wei Geng, Haiqiao Ni, Hanqing Liu and 4 more

Abstract read
In one paragraph

Article in Light, science & applications, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. CNano letters · 2025
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Xueshi Li *State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, 510275, Guangzhou, China.
Shunfa Liu *State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, 510275, Guangzhou, China.
Yuming WeiState Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, 510275, Guangzhou, China.
Jiantao MaState Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, 510275, Guangzhou, China.
Changkun SongState Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, 510275, Guangzhou, China.
Ying YuState Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, 510275, Guangzhou, China.ORCID http://orcid.org/0000-0002-6712-6770
Rongbin SuState Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, 510275, Guangzhou, China.ORCID http://orcid.org/0000-0002-3980-5477
Wei GengHisilicon Research, Huawei Technologies Co., Ltd, 518129, Shenzhen, China.
Haiqiao NiState Key Laboratory for Superlattice and Microstructures, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China.
Hanqing LiuState Key Laboratory for Superlattice and Microstructures, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China.
Xiangbin SuState Key Laboratory for Superlattice and Microstructures, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China.
Zhichuan NiuState Key Laboratory for Superlattice and Microstructures, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China. zcniu@semi.ac.cn.
You-Ling ChenState Key Laboratory for Superlattice and Microstructures, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China. ylchen@semi.ac.cn.
Jin LiuState Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, 510275, Guangzhou, China. liujin23@mail.sysu.edu.cn.ORCID http://orcid.org/0000-0001-5727-6874

Funding

National Natural Science Foundation of China (National Science Foundation of China) 12074442National Natural Science Foundation of China (National Science Foundation of China) 62035017
6 · The paper itself

Abstract

The emerging hybrid integrated quantum photonics combines the advantages of different functional components into a single chip to meet the stringent requirements for quantum information processing. Despite the tremendous progress in hybrid integrations of III-V quantum emitters with silicon-based photonic circuits and superconducting single-photon detectors, on-chip optical excitations of quantum emitters via miniaturized lasers towards single-photon sources (SPSs) with low power consumptions, small device footprints, and excellent coherence properties is highly desirable yet illusive. In this work, we present realizations of bright semiconductor SPSs heterogeneously integrated with on-chip electrically-injected microlasers. Different from previous one-by-one transfer printing technique implemented in hybrid quantum dot (QD) photonic devices, multiple deterministically coupled QD-circular Bragg Grating (CBG) SPSs were integrated with electrically-injected micropillar lasers at one time via a potentially scalable transfer printing process assisted by the wide-field photoluminescence (PL) imaging technique. Optically pumped by electrically-injected microlasers, pure single photons are generated with a high-brightness of a count rate of 3.8 M/s and an extraction efficiency of 25.44%. Such a high-brightness is due to the enhancement by the cavity mode of the CBG, which is confirmed by a Purcell factor of 2.5. Our work provides a powerful tool for advancing hybrid integrated quantum photonics in general and boosts the developments for realizing highly-compact, energy-efficient and coherent SPSs in particular.

Identifiers

PMID36872383
PMCPMC9986240

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.