Evidence map›Paper›PMID 36838173›Full record

ArticleMicromachines2023

Near-Full Current Dynamic Range THz Quantum Cascade Laser Frequency Comb.

Yu Ma, Weijiang Li, Yuanyuan Li, Junqi Liu, Ning Zhuo, Ke Yang, Jinchuan Zhang, Shenqiang Zhai, Shuman Liu, Lijun Wang and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Micromachines, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Yu MaKey Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
Weijiang LiKey Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
Yuanyuan LiKey Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
Junqi LiuKey Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.ORCID 0000-0003-1654-6174
Ning ZhuoKey Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
Ke YangKey Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
Jinchuan ZhangKey Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
Shenqiang ZhaiKey Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
Shuman LiuKey Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.ORCID 0000-0002-9470-8565
Lijun WangKey Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
Fengqi LiuKey Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.

Funding

National Natural Science Foundation of China Nos. 61734006, 61835011, 61991430, 62174158the Key Program of the Chinese Academy of Sciences Nos. XDB43000000, YJKYYQ20190002, QYZDJ-SSW-JSC027Youth Innovation Promotion Association of the Chinese Academy of Sciences Grant Nos. 2021107
6 · The paper itself

Abstract

The present study proposes a terahertz quantum cascade laser frequency comb (THz QCL FC) with a semi-insulated surface plasma waveguide characterized by a low threshold current density, high power and a wide current dynamic range. The gain dispersion value and the nonlinear susceptibility were optimized based on the combination of a hybrid bound-to-continuum active region with a semi-insulated surface plasmon waveguide. Without any extra dispersion compensator, stable frequency comb operation within a current dynamic range of more than 97% of the total was revealed by the intermode beat note map. Additionally, a total comb spectral emission of about 300 GHz centered around 4.6 THz was achieved for a 3 mm long and 150 µm wide device. At 10 K, a maximum output power of 22 mW was obtained with an ultra-low threshold current density of 64.4 A·cm

Indexed as

frequency combhigh powerlow threshold current densitynear-full current dynamic rangequantum cascade lasersterahertz

Identifiers

PMID36838173
PMCPMC9964135

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.