ArticleMicromachines2023
Thermodynamic Multi-Field Coupling Optimization of Microsystem Based on Artificial Intelligence.
Article in Micromachines, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- Intelligent Computing for Future Layered Cathodes in Sodium-Ion Batteries.Small (Weinheim an der Bergstrasse, Germany) · 2026Review
- Multi-Objective Optimization for Through-Silicon via Structure Considering Thermomechanical Reliability and Electrical Performance.Micromachines · 2026Article
- A thermal resistance prediction model for heterogeneous integrated chips incorporating an AI-based BP neural network.Scientific reports · 2026Article
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Authors and funding
6 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
An efficient multi-objective optimization method of temperature and stress for a microsystem based on particle swarm optimization (PSO) was established, which is used to map the relationship between through-silicon via (TSV) structural design parameters and performance objectives in the microsystem, and complete optimization temperature, stress and thermal expansion deformation efficiently. The relationship between the design and performance parameters is obtained by a finite element method (FEM) simulation model. The neural network is built and trained in order to understand the mapping relationship. Then, the design parameters are iteratively optimized using the PSO algorithm, and the FEM results are used to verify the efficiency and reliability of the optimization methods. When the optimization target of peak temperature, bump temperature, TSV temperature, maximum stress and maximum thermal deformation are set as 100 °C, 55 °C, 35 °C, 180 Mpa and 12 μm, the optimization results are as follows: the peak temperature is 97.90 °C, the bump temperature is 56.01 °C, the TSV temperature is 31.52 °C, the maximum stress is 247.4 Mpa and the maximum expansion deformation is 11.14 μm. The corresponding TSV structure design parameters are as follows: the radius of TSV is 10.28 μm, the pitch is 65 μm and the thickness of SiO
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