Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells.

Haoran Sun, Yuhui Chen, Yuhao Ben, Hongping Zhang, Yujie Zhao, Zhihao Jin, Guoqi Li, Mei Zhou

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Article in Materials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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Authors and funding

8 authors.

Haoran SunDepartment of Applied Physics, China Agricultural University, Beijing 100083, China.

Yuhui ChenDepartment of Applied Physics, China Agricultural University, Beijing 100083, China.

Yuhao BenState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

Hongping ZhangCollege of Science, China Agricultural University, Beijing 100083, China.

Yujie ZhaoCollege of Science, China Agricultural University, Beijing 100083, China.

Zhihao JinCollege of Science, China Agricultural University, Beijing 100083, China.

Guoqi LiScience and Technology on Reliability and Environment Engineering Laboratory, School of Reliability and Systems Engineering, Beihang University, Beijing 100191, China.

Mei ZhouDepartment of Applied Physics, China Agricultural University, Beijing 100083, China.

Funding

National Natural Science Foundation of China 61974162

6 · The paper itself

Abstract

GaN cap layer with different thicknesses was grown on each InGaN well layer during MOCVD growth for InGaN/GaN multiple quantum well (MQW) samples to study the influence of the cap layer on the photoluminescence (PL) characteristics of MQWs. Through the temperature-dependent (TD) PL spectra, it was found that when the cap layer was too thick, the localized states of the quantum wells were relatively non-uniform. The thicker the well layer, the worse the uniformity of the localized states. Furthermore, through micro-area fluorescence imaging tests, it was found that when the cap layer was too thick, the luminescence quality of the quantum well was worse. In summary, the uniformity of the localized states in the quantum wells and the luminescence characteristics of the quantum wells could be improved when a relatively thin cap layer of the quantum well was prepared during the growth. These results could facilitate high efficiency QW preparation, especially for green LEDs.

Indexed as

cap layerInGaN/GaN MQWlocalized stateluminescence characteristics

Identifiers

PMID36837187

DOI10.3390/ma16041558

PMCPMC9959770

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