Evidence map›Paper›PMID 36793296›Full record

ArticleRSC advances2023

The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes.

Tien-Yu Wang, Wei-Chih Lai, Qiao-Ju Xie, Shun-Hao Yang, Sheng-Po Chang, Cheng-Huang Kuo, Jinn-Kong Sheu

Abstract read
In one paragraph

Article in RSC advances, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Tien-Yu WangDepartment of Photonics, National Cheng Kung University Tainan 70101 Taiwan weilai@ncku.edu.tw.
Wei-Chih LaiDepartment of Photonics, National Cheng Kung University Tainan 70101 Taiwan weilai@ncku.edu.tw.ORCID https://orcid.org/0000-0003-2703-8845
Qiao-Ju XieDepartment of Photonics, National Cheng Kung University Tainan 70101 Taiwan weilai@ncku.edu.tw.
Shun-Hao YangDepartment of Photonics, National Cheng Kung University Tainan 70101 Taiwan weilai@ncku.edu.tw.
Sheng-Po ChangDepartment of Photonics, National Cheng Kung University Tainan 70101 Taiwan weilai@ncku.edu.tw.ORCID https://orcid.org/0000-0002-4126-0576
Cheng-Huang KuoInstitute of Lighting and Energy Photonics, College of Photonics, National Yang Ming Chiao Tung University Tainan 71150 Taiwan.
Jinn-Kong SheuDepartment of Photonics, National Cheng Kung University Tainan 70101 Taiwan weilai@ncku.edu.tw.ORCID https://orcid.org/0000-0001-6359-7578

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The growth conditions of the AlGaN barrier in AlGaN/AlGaN deep ultra-violet (DUV) multiple quantum wells (MQWs) have crucial influences on the light output power of DUV light-emitting diodes (LEDs). The reduction of the AlGaN barrier growth rate improved the qualities of AlGaN/AlGaN MQWs, such as surface roughness and defects. The light output power enhancement could reach 83% when the AlGaN barrier growth rate was reduced from 900 nm h

Identifiers

PMID36793296
PMCPMC9923460

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.