ArticleACS applied materials & interfaces2023
Printed n- and p-Channel Transistors using Silicon Nanoribbons Enduring Electrical, Thermal, and Mechanical Stress.
Article in ACS applied materials & interfaces, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
3 citing papers in PubMed.
- Semiconductor manufacturing wastewater challenges and the potential solutions via printed electronics.iScience · 2025Review
- From Printed Devices to Vertically Stacked, 3D Flexible Hybrid Systems.Advanced materials (Deerfield Beach, Fla.) · 2025Review
- Highly Conductive PEDOT:PSS: Ag Nanowire-Based Nanofibers for Transparent Flexible Electronics.ACS applied materials & interfaces · 2024Article
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Authors and funding
6 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Printing technologies are changing the face of electronics with features such as resource-efficiency, low-cost, and novel form factors. While significant advances have been made in terms of organic electronics, the high-performance and stable transistors by printing, and their large-scale integration leading to fast integrated circuits remains a major challenge. This is because of the difficulties to print high-mobility semiconducting materials and the lack of high-resolution printing techniques. Herein, we present silicon based printed n- and p-channel transistors to demonstrate the possibility of developing high-performance complementary metal-oxide-semiconductor (CMOS) computing architecture. The direct roll transfer printing is used here for deterministic assembly of high-mobility single crystal silicon nanoribbons arrays on a flexible polyimide substrate. This is followed by high-resolution electrohydrodynamic printing to define source/drain/gate electrodes and to encapsulate, thus leading to printed devices. The printed transistors show effective peak mobilities of 15 cm
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Registered trials
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