High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy.

Kentaro Nagamatsu, Takumi Miyagawa, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi

Abstract read

In one paragraph

Article in Scientific reports, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy.Scientific reports · 2023
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Kentaro NagamatsuInstitute of Post-LED Photonics, Tokushima University, 2-1 Minami-Josanjima, Tokushima, 770-8506, Japan. nagamatsu@tokushima-u.ac.jp.

Takumi MiyagawaGraduate School of Advanced Technology and Science, Tokushima University, 2-1 Minami-Josanjima, Tokushima, 770-8506, Japan.

Atsushi TomitaGraduate School of Advanced Technology and Science, Tokushima University, 2-1 Minami-Josanjima, Tokushima, 770-8506, Japan.

Hideki HirayamaInstitute of Post-LED Photonics, Tokushima University, 2-1 Minami-Josanjima, Tokushima, 770-8506, Japan.

Yuusuke TakashimaGraduate School of Advanced Technology and Science, Tokushima University, 2-1 Minami-Josanjima, Tokushima, 770-8506, Japan.

Yoshiki NaoiInstitute of Post-LED Photonics, Tokushima University, 2-1 Minami-Josanjima, Tokushima, 770-8506, Japan.

Funding

Japan Society for the Promotion of Science 20K21006

6 · The paper itself

Abstract

Deep ultraviolet light-emitting diodes have attracted considerable attention for realizing virus inactivation applications. The UV-LEDs use the AlN underlying layer and the plane sapphire substrate. However, the low growth temperature in AlN underlying layer is grown by limited growth temperature in conventional MOVPE, and high temperature is preferable for AlN growth. Furthermore, the AlN underlying layer has many dislocations owing to the active layer in the device region when the flat sapphire substrate was used with a dislocation value of > 10

Identifiers

PMID36765074

DOI10.1038/s41598-023-29150-6

PMCPMC9913039

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LicenceCC BY

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.