Evidence map›Paper›PMID 36719071›Full record

ArticleACS applied materials & interfaces2023

Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applications.

Seyed Mehdi Sattari-Esfahlan, Hyoung Gyun Kim, Sang Hwa Hyun, Jun-Hui Choi, Hyun Sik Hwang, Eui-Tae Kim, Hyeong Gi Park, Jae-Hyun Lee

Open access · hybridAbstract read
In one paragraph

Article in ACS applied materials & interfaces, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.

0numbers the graph read from it
0cells of the map it votes in
9citing papers in PubMed
3.2field-weighted citation impact, top 7% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

9 citing papers in PubMed, 34 citations in OpenAlex.

  1. Review
  2. Near-zero hysteresis van der Waals MnAlCommunications materials · 2026
    Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors at 3 institutions in 2 countries.

Seyed Mehdi Sattari-EsfahlanDepartment of Material Science and Engineering, Ajou University, Suwon16499, Korea.ORCID 0000-0002-4596-6015
Hyoung Gyun KimDepartment of Materials Science and Engineering, Seoul National University, Seoul08826, Korea.
Sang Hwa HyunDepartment of Material Science and Engineering, Ajou University, Suwon16499, Korea.
Jun-Hui ChoiDepartment of Material Science and Engineering, Ajou University, Suwon16499, Korea.
Hyun Sik HwangDepartment of Material Science and Engineering, Ajou University, Suwon16499, Korea.
Eui-Tae KimDepartment of Materials Science and Engineering, Chungnam National University, Daejeon34134, Korea.ORCID 0000-0002-5488-7159
Hyeong Gi ParkAI-Superconvergence KIURI Translational Research Center, Ajou University School of Medicine, Suwon16499, Korea.ORCID 0000-0002-9590-1623
Jae-Hyun LeeDepartment of Material Science and Engineering, Ajou University, Suwon16499, Korea.ORCID 0000-0001-5117-8923
Ajou University · KRSeoul National University · KRChungnam National University · KR

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

We successfully demonstrated the improvement and stabilization of the electrical properties of a graphene field effect transistor by fabricating a sandwiched amorphous boron nitride (a-BN)/graphene (Gr)/a-BN using a directly grown a-BN film. The a-BN film was grown

Indexed as

amorphous boron nitride (a-BN)boron nitride encapsulationfield effect transistor (FET)grapheneheterojunctionhigh mobility

Identifiers

PMID36719071
PMCPMC9923684
OpenAlexW4318617916

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.