Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers.

Panpan Zheng, Bingyang Cai, Tao Zhu, Li Yu, Wenjie Wu, Liangcheng Tu

Abstract read

In one paragraph

Article in Micromachines, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

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5 · Who and what money

Authors and funding

6 authors.

Panpan ZhengWuHan National Laboratory for Optoelectronics, Wuhan 430074, China.

Bingyang CaiThe MOE Key Laboratory of Fundamental, Physical Quantities Measurement, Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.

Tao ZhuBeijing Institute of Smart Energy (BISE), Beijing 100085, China.

Li YuThe MOE Key Laboratory of Fundamental, Physical Quantities Measurement, Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.

Wenjie WuThe MOE Key Laboratory of Fundamental, Physical Quantities Measurement, Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.ORCID 0000-0001-5079-3641

Liangcheng TuTianQin Research Center for Gravitational Physics, School of Physics and Astronomy, Sun Yat-sen University, Zhuhai 519000, China.ORCID 0000-0003-1014-9784

Funding

National Natural Science Foundation of China 41874089National Natural Science Foundation of China 41904157

6 · The paper itself

Abstract

The measurements of wafers' surface profile are crucial for safeguarding the fabrication quality of integrated circuits and MEMS devices. The current techniques measure the profile mainly by moving a capacitive or optical spacing sensing probe along multiple lines, which is high-cost and inefficient. This paper presents the calculation, simulation and experiment of a method for measuring the surface profile with arrayed capacitive spacing transducers. The calculation agreed well with the simulation and experiment. Finally, the proposed method was utilized for measuring the profile of a silicon wafer. The result is consistent with that measured by a commercial instrument. As a movement system is not required, the proposed method is promising for industry applications with superior cost and efficiency to the existing technology.

Indexed as

capacitive transducermulti-gridsurface profilewafer warpage

Identifiers

PMID36677183

DOI10.3390/mi14010122

PMCPMC9863230

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LicenceCC BY

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.